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| SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS(on)=25 PARTMARKING DETAIL COMPLEMENTARY TYPE 7 ZVP2120G D ZVP2120 ZVN2120G G S D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -200 -200 -1.2 20 UNIT V mA A V W C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 50 100 25 7 7 15 12 15 -300 25 -200 -1.5 -3.5 -20 -10 -100 V V nA A A Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125C (2) mA VDS=-25 V, VGS=-10V VGS=-10V, ID=-150mA VDS=-25V, ID=-150mA mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss td(on) tr td(off) tf VDD -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 431 ZVP2120G TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) VGS= -10V -8V -7V -6V -0.4 -0.4 VGS= -10V -8V -7V -6V -0.6 -0.3 -5V -0.2 -4.5V -0.1 -4V -3.5V 0 0 -2 -4 -6 -8 -10 -5V -0.2 -4.5V -4V 0 0 -20 -40 -60 -80 -3.5V -100 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) -20 VDS-Drain Source Voltage (Volts) -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 -2 -4 -6 -8 ID= -300mA VDS= -25V -0.6 -0.4 -10V -0.2 -200mA -100mA -50mA -10 0 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance () Transfer Characteristics 100 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 e eR rc ou -S ain Dr eR nc ta sis n) (o DS 50 ID= -300mA -200mA -I00mA -50mA VGS=-10V ID=-0.1A VGS=VDS ID=-1mA Gate Thresh old Voltage VG S(t h) 10 -1 -10 -20 20 40 60 80 100 120 140 160 180 VGS-Gate Source Voltage (Volts) T-Temperature (C) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature 3 - 432 ZVP2120G TYPICAL CHARACTERISTICS 200 200 VDS=-25V gfs-Transconductance (mS) 160 140 120 100 80 60 40 20 0 0 -0.2 -0.4 gfs-Transconductance (mS) 180 180 160 140 120 100 80 60 40 20 0 0 -2 -4 -6 -8 -10 VDS=-25V -0.6 -0.8 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 0 ID=- 0.4A -2 -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS= -50V -100V -180V 100 C-Capacitance (pF) 80 Ciss 60 40 20 Coss Crss 0 -10 -20 -30 -40 -50 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 433 |
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